Green Product
SP8007
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PROD...
Green Product
SP8007
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
3.8 @ VGS=4.5V 3.9 @ VGS=4.0V 24V 27A 4.6 @ VGS=3.7V 5.1 @ VGS=3.1V 5.9 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D D D
P in 1
5 6 7 8
4 3 2 1
G S S S
D
TSON 3.3 x 3.3
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b ad
Limit 24 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 27 21.6 81
a
Units V V A A A W W °C
Maximum Power Dissipation
1.67 1.07 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
75
°C/W
Details are subject to change without notice.
Jul,08,2013
1
www.samhop.com.tw
SP8007
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th)
VGS=0V , ID=250uA VDS=20V , VGS=0V
24 1 ±10
V uA uA
VGS= ±12V , VDS=0V
VDS=VGS , ID=1.0mA VGS=4.5V , ID=13.5A VGS=4.0V , ID=13.5A VGS=3.7V , ID=13.5A VGS=3.1V , ID=13.5A VGS=2.5V , ID=13.5A VDS=5V , ID=13.5A
0.5 2.5 2.6 2.7 2.9 3.5
0.9 3.3 3.4...