STA6620

S T A6620 S amHop Microelectronics C orp. Nov. 24 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 40V F E AT UR E S S uper high dense cell design for low R DS (ON ). ID 7A R DS (ON) ( m Ω ) Max 25 @ V G S = 10V 42 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. D1 8 D1 7 D2 6 D2 5 P DIP -8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol V DS V GS 25 C 70 C IDM IS PD ID Limit 40 20 7 5.9 30 1.7 3 2 Unit V V A A A A Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C W C T J , T S TG -55 to 150 THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 41.5 C /W S T A6620 N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 7A V GS =4.5V, ID= 5A V DS = 5V, V GS = 10V V DS = 5V, ID = 7A Min Typ C Max Unit 40 1 10 1 2 OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage V uA nA V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S our...