STF8209

Gr Pr STF8209 Ver 2.2 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 22.0 @ VGS=4.5V 22.5 @ VGS=4.0V 20V 6.5A 23.5 @ VGS=3.7V 27.5 @ VGS=3.1V 33.5 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact (D1/D2) S2 G1 3 S1 2 T D F N 2X 3 4 G2 5 6 S2 S2 D1/D2 S1 1 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a TA=25°C TA=70°C TA=25°C TA=70°C Limit 20 ±12 6.5 5.2 40 1.56 1.00 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 80 °C/W Details are subject to change without notice. Apr,10,2012 1 www.samhop.com.tw STF8209 Ver 2.2 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=18V , VGS=0V Min 20 Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS= ±12V , VDS=0V 1 ±10 VDS=VGS , ID=1.0mA VGS=4.5V , ID=3.25A VGS=4.0V , ID=3.25A VGS=3.7V , ID=3.25A VGS=3.1V , ID=3.25A...