Green Product
STB/P440S
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect ...
Green Product
STB/P440S
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
40V
FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
ID
65A
R DS(ON) (m Ω) Max
8 @ VGS=10V 11.5 @ VGS=4.5V
D
G
S
G D S
S TB S E R IE S TO-263(DD-P AK)
S TP S E R IE S TO-220
ABSOLUTE Symbol VDS VGS ID IDM EAS PD TJ, TSTG
MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy c Maximum Power Dissipation
a b a
Limit 40 ±20 65 52 191 196
Units V V A A A mJ W W °C
TA=25 °C TA=70 °C
TA=25 °C TA=70 °C
62.5 40 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient
1.8 50
°C/W °C/W
Apr,13,2009
1
www.samhop.com.tw
Downloaded from Elcodis.com electronic components distributor
STB/P440S
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=250uA VDS=32V , VGS=0V
Min 40
Typ
Max
Units V A nA
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
b a
VGS= ±20V , VDS=0V
...