AM2303E3VR

AiT Semiconductor Inc. www.ait-ic.com AM2303 MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V. FEATURES     -30V/-4.3A, RDS(ON) =50mΩ(typ.)@VGS =-10V -30V/-3.5A, RDS(ON) =58mΩ(typ.)@VGS =-4.5V -30V/-2.5A, RDS(ON) =73mΩ(typ.)@VGS =-2.5V Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in SOT-23 Package This device is suitable for use as a load switch or other general applications. The AM3401 is available in SOT-23 Package ORDERING INFORMATION Package Type SOT-23 Note E3 Part Number AM2303E3R AM2303E3VR APPLICATIONS  High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA   DC/DC Converter Load Switch V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package P CHANNEL MOSFET REV1.2 -MAR 2011 RELEASED, JUN 2012 UPDATED - -1- AiT Semiconductor Inc. www.ait-ic.com AM2303 MOSFET -30V P-CHANNEL ENHANCEMENT MODE PIN DESCRIPTION Top View Pin # 1 2 3 Symbol G S D Gate Source Drain Function REV1.2 -MAR 2011 RELEASED, JUN 2012 UPDATED - -2- AiT Semiconductor Inc. www.ait-ic.com AM2303 MOSFET -30V P-CHANNEL ENHANCEMENT MODE ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-So...