N-Channel Enhancement Mode Field Effect Transistor
Description
S amHop Microelectronics C orp.
S T U/D602S
Aug 26,2006
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
60V
F E AT UR E S
( m W ) Max
ID
22A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
30 @ V G S = 10V 38 @ V G S = 4.5V
R ugged and reliable. TO-252 and TO-251 P ackage.
D
D G S
G D
S
G
S TU S E R I...
