Green Product
STU/D606S
Ver 1.2
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect ...
Green Product
STU/D606S
Ver 1.2
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
60V
ID
21A
R DS(ON) (m Ω) Max
56 @ VGS=10V 68 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
G S
G D
S
STU SERIES TO - 252AA( D - PAK )
STD SERIES TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit 60 ±20 TC=25°C TC=70°C 21 16.8 61 25 TC=25°C TC=70°C 50 32 -55 to 150
Units V V A A A mJ W W °C
Sigle Pulse Avalanche Energy Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.5 50 °C/W °C/W
Details are subject to change without notice.
Dec,03,2012
1
www.samhop.com.tw
STU/D606S
Ver 1.2
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=250uA VDS=48V , VGS=0V
Min
Typ
Max
Units
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
60 1 ±100
V uA nA
VGS= ±20V , VDS=0V
VDS=VGS , ID=250uA VGS=10V , ID=10.5A ...
