Green Product
SamHop Microelectronics Corp.
STU/D600S
Aug 25,2006
N-Channel Enhancement Mode Field Effect Transistor
...
Green Product
SamHop Microelectronics Corp.
STU/D600S
Aug 25,2006
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS
60V
FEATURES
( m W ) Max
ID
16A
RDS(ON)
Super high dense cell design for low RDS(ON).
55 @ VGS = 10V 70 @ VGS = 4.5V
Rugged and reliable. TO-252 and TO-251 Package.
D
D G S
G D
S
G
STU SERIES TO-252AA(D-PAK)
STD SERIES TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @Ta -Pulsed
b a
Symbol VDS VGS 25 C 70 C ID IDM
a
Limit 60 20 16 10.7 30 15 50 35 -55 to 175
Unit V V A A A A W C
Drain-Source Diode Forward Current Maximum Power Dissipation
a
IS PD TJ, TSTG
Ta= 25 C Ta=70 C
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W
S T U/D600S
N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg
c
Condition
V GS = 0V, ID = 250uA V DS = 48V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 8A V GS =4.5V, ID= 4A V DS = 5V, V GS = 10V V DS = 10V, ID =8A
Min Typ C Max Unit
60 1 V uA 100 nA 1.0 1.8 45 50 20 16 670 72 45 3.2 13 10 25 9 14.2 7 1.7 3.8 3.0 70 V
m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON ...