Document
Green Product
STU666S STD666S
Ver 1.0
SamHop Microelectronics Corp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
60V
ID
6A
RDS(ON) (mΩ) Max
101 @ VGS=10V 126 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package.
G S
G D
S
STU SERIES TO-252AA(D-PAK)
STD SERIES TO-251(I-PAK)
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a e
Limit 60 ±20 TC=25°C TC=70°C 6 4.8 17 12 TC=25°C TC=70°C 42 27 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W
Details are subject to change without notice.
Jul,15,2013
1
www.samhop.com.tw
STU666S STD666S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=48V , VGS=0V
60 1 ±100
V uA nA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=3A VGS=4.5V , ID=2.7A VDS=10V , ID=3A
1
1.7 81 93 15 494 41 30
3 101 126
V m ohm m ohm S pF pF pF
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
c
VDS=25V,VGS=0V f=1.0MHz
VDD=30V ID=1A VGS=10V RGEN= 6 ohm VDS=30V,ID=3A,VGS=10V VDS=30V,ID=3A,VGS=4.5V VDS=30V,ID=3A, VGS=10V
10.3 10.7 19 8.4 7.2 3.8 1.1 2.1
ns ns ns ns nC nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=2A
0.82
1.3
V
Notes
_ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) e.Drain current limited by maximum junction temperature.
Jul,15,2013
2
www.samhop.com.tw
STU666S STD666S
Ver 1.0
15 VGS=10V 15
ID, Drain Current(A)
VGS=4.5V 9
VGS=4V VGS=3.5V
ID, Drain Current(A)
12
12
9 Tj=125 C 6 25 C 3 -55 C
6 VGS=3V 3
0
0
0.5
1
1.5
2
2.5
3
0 0 0.8 1.6 2.4 3.2 4.0
4.8
VDS, Drain-to-Source Voltage(V)
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
240
Figure 2. Transfer Characteristics
2.25
R DS(on), On-Resistance Normalized
200
2.00 1.75 1.50 1.25 1.00 0
V G S =4.5V I D =2.7A V G S =10V I D =3A
RDS(on)(m Ω)
160 120 80 V G S =10V 40 1 0.1 V G S =4.5V
3.