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STD666S Dataheets PDF



Part Number STD666S
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet STD666S DatasheetSTD666S Datasheet (PDF)

Green Product STU666S STD666S Ver 1.0 SamHop Microelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 6A RDS(ON) (mΩ) Max 101 @ VGS=10V 126 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Sou.

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Green Product STU666S STD666S Ver 1.0 SamHop Microelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 6A RDS(ON) (mΩ) Max 101 @ VGS=10V 126 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a e Limit 60 ±20 TC=25°C TC=70°C 6 4.8 17 12 TC=25°C TC=70°C 42 27 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W Details are subject to change without notice. Jul,15,2013 1 www.samhop.com.tw STU666S STD666S Ver 1.0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=48V , VGS=0V 60 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=3A VGS=4.5V , ID=2.7A VDS=10V , ID=3A 1 1.7 81 93 15 494 41 30 3 101 126 V m ohm m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=25V,VGS=0V f=1.0MHz VDD=30V ID=1A VGS=10V RGEN= 6 ohm VDS=30V,ID=3A,VGS=10V VDS=30V,ID=3A,VGS=4.5V VDS=30V,ID=3A, VGS=10V 10.3 10.7 19 8.4 7.2 3.8 1.1 2.1 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=2A 0.82 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) e.Drain current limited by maximum junction temperature. Jul,15,2013 2 www.samhop.com.tw STU666S STD666S Ver 1.0 15 VGS=10V 15 ID, Drain Current(A) VGS=4.5V 9 VGS=4V VGS=3.5V ID, Drain Current(A) 12 12 9 Tj=125 C 6 25 C 3 -55 C 6 VGS=3V 3 0 0 0.5 1 1.5 2 2.5 3 0 0 0.8 1.6 2.4 3.2 4.0 4.8 VDS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 240 Figure 2. Transfer Characteristics 2.25 R DS(on), On-Resistance Normalized 200 2.00 1.75 1.50 1.25 1.00 0 V G S =4.5V I D =2.7A V G S =10V I D =3A RDS(on)(m Ω) 160 120 80 V G S =10V 40 1 0.1 V G S =4.5V 3.


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