Dual N-Channel Enhancement Mode Field Effect Transistor
Description
S amHop Microelectronics C orp.
S T S 3622
J an, 03 2006
Dual N-Channel Enhancement Mode Field Effect Transistor
P R ODUC T S UMMAR Y
V DS S
30V
F E AT UR E S
( m W ) Max
ID
3A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
65 @ V G S = 10V 90 @ V G S =4.5V
R ugged and reliable. S OT-26 package.
D1 D2
S OT26 Top View
G1 S2 G2
1 2 3
6...
