Green Product
STP35N10
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect T...
Green Product
STP35N10
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
100V
ID
35A
R DS(ON) (m Ω) Typ
30 @ VGS=10V
FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 package.
D
G D S
G
S TP S E R IE S TO-220
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a a
Limit 100 ±20 T C =25 °C T C =70 °C TC=25°C TC=70°C 35 29.3 103 75 52.5 -55 to 175
Units V V A A A W W °C
Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient
2 62.5
°C/W °C/W
Details are subject to change without notice.
Apr,22,2014
1
www.samhop.com.tw
STP35N10
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current
VGS=0V , ID=250uA VDS=80V , VGS=0V
100 1 ±100
V uA nA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) gFS Forward Transconductance DYNAMIC CISS COSS CRSS CHARACTERISTICS b Input Capacitance Output Capacitance Reverse Transfe...