STS400

Gre r Pro STS400 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V ID 1.2A R DS(ON) (m Ω) Max 350 @ VGS=10V 500 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D S G G S OT -23 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a TA=25°C TA=70°C TA=25°C TA=70°C Limit 40 ±20 1.2 0.96 4.5 1.25 0.8 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 100 °C/W Details are subject to change without notice. May,31,2012 1 www.samhop.com.tw STS400 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Ver 1.1 Min 40 Typ Max Units V OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current 1 ±10 uA uA VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=0.6A VGS=4.5V , ID=0.5A VDS=5V , ID=0.6A 0.8 1.3 250 350 1.4 2.0 350 500 V m ohm m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS...