STS3420

Green Product STS3420 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 33 @ VGS= 10V 30V 4.5A 40 @ VGS= 4.5V 53 @ VGS= 2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D S OT 23 D S G G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 30 ±12 TC=25°C TC=70°C TC=25°C TC=70°C 4.5 3.6 18 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice. Dec,19,2013 1 www.samhop.com.tw STS3420 Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min 30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±12V , VDS=0V 1 ±100 uA nA VDS=VGS , ID=250uA VGS=10V , ID=2.3A VGS=4.5V , ID=2A VGS=2.5V , ID=1.8A VDS=5V , ID=2.3A 0.5 0.78 26 30 39 13 1.5 33 40 53 V m ohm m ohm m ohm S DYNAMIC CHARACTERISTICS ...