STS3414

Green Product STS3414 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 50 @ VGS=10V 30V 4A 60 @ VGS=4.5V 75 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-23 package. D S OT-23 D S G G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a a Limit 30 ±12 TA=25°C TA=25°C 4 15 1.25 -55 to 150 Units V V A A W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice. Jan,16,2009 1 www.samhop.com.tw STS3414 Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c 30 1 ±100 VGS= ±12V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=4A VGS=4.5V , ID=3A VGS=2.5V , ID=1A VDS=5.0V , ID=4A 0.5 0.9 37 45 50 13 1.2 50 60 75 V m ohm m ohm m ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS ...