Green Product
STK801
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PROD...
Green Product
STK801
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
80V
ID
0.6A
R DS(ON) ( Ω) Max
1.2 @ VGS=10V 1.5 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D
D
G
S
SOT-89
D G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a -Pulsed
b
Limit 80 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 0.6 0.48 3.2 1.25 0.8 -55 to 150
Units V V A A A W W °C
Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
100
°C/W
Details are subject to change without notice.
Dec,28,2012
1
www.samhop.com.tw
STK801
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=64V , VGS=0V
80 1 ±10
V uA uA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=0.30A VGS=4.5V , ID=0.28A VDS=10V , ID=0.30A
1
1.9 1.00 1.15 0.9 61 18 9
3 1.20 1.50
V ohm ohm S pF pF pF
DYNAMIC CHARACTERISTICS Input Capacita...