SDT01N02

Green Product SDT01N02 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 200V F E AT UR E S S uper high dense cell design for low R DS (ON ). ID 1.5A R DS(ON) ( Ω) Typ 3.5 @ VGS=10V R ugged and reliable. S urface Mount P ackage. D G S G SOT-223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a a Limit 200 ±30 TA=25°C TA=25°C 1.5 6 2.98 -55 to 150 Units V V A A W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 42 °C/W Details are subject to change without notice. Jun,07,2012 1 www.samhop.com.tw SDT01N02 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=160V , VGS=0V Min Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b 200 1 ±100 uA nA VGS= ±30V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=10V , ID=1A 2 2.9 3.5 0.9 4 4.0 V ohm S DYNAMIC CHARACTERISTICS CISS COSS CRSS Input Capacitance Output Capacitance Reverse Transfer Capacitance b VDS=25V,VGS=0V f=1.0MHz...