STT6602
Elektronische Bauelemente N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The STT6602 uses advanced trench technology to provide excellent on-resistance and low gate charge. The complementary MOSFETs form a hig...
