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STT4443

SeCoS

P-Channel MOSFET

STT4443 Elektronische Bauelemente -2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET RoHS Compliant Produ...


SeCoS

STT4443

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Description
STT4443 Elektronische Bauelemente -2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION STT4443 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TSOP-6 package is universally used for all commercial-industrial applications. A E 6 5 4 TSOP-6 L B FEATURES    Simple Drive Requirement Smaller Outline Package Surface mount package F DG 1 2 3 C K H J MARKING 4443  Date Code REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package TSOP-6 MPQ 3K Leader Size 7 inch TOP VIEW ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg TA=25°C TA=25°C TA=70°C Symbol VDS VGS ID IDM PD Ratings -30 ±20 -2.3 -1.8 -10 1.14 0.01 -55~150 Unit V V A A W W / °C °C Thermal Resistance Rating Maximum Junction to Ambient 3 RJA 110 °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 02-Dec-2011 Rev. B Page 1 of 4 STT4443 Elektronische Bauelemente -2.3A , -30V , RDS(ON) 120 m P-Channel En...




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