P-Channel MOSFET
STT4443
Elektronische Bauelemente -2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET
RoHS Compliant Produ...
Description
STT4443
Elektronische Bauelemente -2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
STT4443 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TSOP-6 package is universally used for all commercial-industrial applications.
A E
6 5 4
TSOP-6
L
B
FEATURES
Simple Drive Requirement Smaller Outline Package Surface mount package
F DG
1
2
3
C K
H J
MARKING
4443
Date Code
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50
REF. G H J K L
Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.
PACKAGE INFORMATION
Package TSOP-6 MPQ 3K Leader Size 7 inch
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg TA=25°C TA=25°C TA=70°C
Symbol
VDS VGS ID IDM PD
Ratings
-30 ±20 -2.3 -1.8 -10 1.14 0.01 -55~150
Unit
V V A A W W / °C °C
Thermal Resistance Rating
Maximum Junction to Ambient
3
RJA
110
°C / W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
02-Dec-2011 Rev. B
Page 1 of 4
STT4443
Elektronische Bauelemente -2.3A , -30V , RDS(ON) 120 m P-Channel En...
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