S T M9930A
S amHop Microelectronics C orp.
Dec.20, 2005
2N and 2P Channel E nhancement Mode Field E ffect Transistor
P...
S T M9930A
S amHop Microelectronics C orp.
Dec.20, 2005
2N and 2P Channel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y (N-C hannel)
V DS S
30V
P R ODUC T S UMMAR Y (P -C hannel)
V DS S
-30V
ID
6A
R DS (ON) ( m W )
Max
ID
-5.3A
R DS (ON) ( m W )
Max
35 @ V G S = 10V 54 @ V G S = 4.5V
P1S
53 @ V G S = -10V 75 @ V G S = -4.5V
P2S P2G
P2G N2D/P2D P1S/P2S P1G N2G N1S/N2S N1D/P1D N1G
P1G
P1N1D
P2N2D
S O-8
N1G N1S N2S
N2G
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
b a
S ymbol V DS V GS 25 C 70 C ID IDM IS PD T J , T S TG
N-C hannel P-C hannel 30 20 6 4 20 1.7 2 1.44 -55 to 150 -30 20 -5.3 -3.5 -20 -1.7
Unit V V A A A A W C
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation
a
Ta= 25 C Ta=70 C
Operating Junction and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA
1
62.5
C /W
S T M9930A
N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg
c
Condition
V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 5A V GS =4.5V, ID= 3A V DS = 5V, V GS = 4.5V V DS = 10V, ID= 5A
Min Typ C Max Unit
30 1 V uA 100 nA 1 1.5 29 42 20 8 550 130 60 2.3 7 8 15 6 13 6.6 1.4 3.8 3 35 54 V
m ohm m ohm
OFF CHAR...