STM6924

Green Product STM6924 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 6.8A R DS(ON) (m Ω) Max 28 @ VGS=10V 46 @ VGS=4.5V D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a Limit 40 ±20 TA=25°C TA=70°C d Units V V A A A mJ W W °C 6.8 5.4 25 18 -Pulsed b Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C 2 1.28 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. Nov,07,2008 1 www.samhop.com.tw STM6924 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min 40 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V 1 ±100 uA nA VDS=VGS , ID=250uA VGS=10V , ID=6.8A VGS=4.5V , ID=5.3A VDS=5V , ID=6.8A 1 1.8 23 35 12 3 28 46 V m ohm m o...