STM4800S

S T M4800S S amHop Microelectronics C orp. J un.07 2006 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( m Ω ) Max ID 8A R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = 10V 28 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. S O-8 1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Tj=25 C b -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation a S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 30 20 8 32 1.7 2.5 -55 to 150 Unit V V A A A W C Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient R JA 50 C /W 1 S T M4800S E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 8A V GS =4.5V, ID= 7A V DS = 10V, V GS = 10V V DS = 10V, ID = 8A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.7 15 19 10 17 820 177 60 2.6 10 11 36 9 3 20 V m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductanc...