L2N7002LT1G

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 ESD Protected:1000V S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Drain Current – Continuous TC = 25°C (Note 1.) – Continuous TC = 100°C (Note 1.) – Pulsed (Note 2.) Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Symbol VDSS VDGR ID ID Value 60 60 ±115 ±75 ±800 Unit Vdc Vdc mAdc L2N7002LT1G S-L2N7002LT1G 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 2 CASE 318, STYLE 21 SOT– 23 (TO–236AB) Simplified Schematic IDM Gate 1 VGS VGSM ±20 ±40 Vdc Vpk Source 2 3 Drain THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 RθJA TJ, Tstg 417 -55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C (Top View) RθJA PD MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. 3. FR–5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5%...