1N5712

1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high break­down voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping. The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimized for low turn-on voltage. The 5082-2835 is particularly well suited for the UHF mixing needs of the CATV marketplace. Features Low Turn-On Voltage As Low as 0.34 V at 1 mA Pico Second Switching Speed High Breakdown Voltage Up to 70 V Matched Characteristics Available Outline 15 0.41 (.016)� 0.36 (.014) Maximum Ratings Junction Operating and Storage Temperature Range   1N5711, 1N5712, 5082-2800/10/11...... -65°C to +200°C   5082-2835...................................................... -60°C to +150°C DC Power Dissipation   (Measured in an infinite heat sink at TCASE = 25°C)   Derate linearly to zero at maximum rated temp.   1N5711, 1N5712, 5082-2800/10/11......................250 mW   5082-2835......................................................................150 mW Peak Inverse Voltage................................................................. VBR 25.4 (1.00)� MIN. 1.93 (.076)� 1.73 (.068...