Document
DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.
0.4 −0.05
+0.1
PACKAGE DIMENSIONS (Units: mm)
2.8±0.2 1.5 0.65 −0.15
+0.1
FEATURES
• Low Noise and High Gain
0.95 0.95 2.9±0.2
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
2
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg
65
20 12 3.0 100 200 150 to +150
V V V mA mW
C C
0.3
Marking
1.1 to 1.4
PIN CONNECTIONS 1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE* fT Cre** 50 120 7 0.55 11.5 1.1 2.0 1.0 MIN. TYP. MAX. 1.0 1.0 300 GHz pF dB dB UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 7 mA, f = 1.0 GHz
A A
S21e2
NF
*
Pulse Measurement PW 350 s, Duty Cycle 2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. hFE Classification
Class Marking hFE R23/Q * R23 50 to 100 R24/R * R24 80 to 160 R25/S * R25 125 to 250 * Old Specification / New Specification
Document No. P10356EJ5V1DS00 (5th edition) Date Published March 1997 N Printed in Japan
0 to 0.1
©
0.16 −0.06
+0.1
0.4 −0.05
+0.1
1
3
1985
2SC3356
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
PT-Total Power Dissipation-mW
200
Cre-Feed-back Capacitance-pF
Free Air
f = 1.0 MHz
1
100
0.5
0
50
100
150
0.3 0
0.5
1
2
5
10
20
30
TA-Ambient Temperature-°C DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V 15
VCB-Collector to Base Voltage-V INSERTION GAIN vs. COLLECTOR CURRENT
hFE-DC Current Gain
100
|S21e|2-Insertion Gain-dB
10
50
5 VCE = 10 V f = 1.0 GHz 1 5 10 50 70 IC-Collector Current-mA
20
10 0.5
1
5
10
50
0 0.5
IC-Collector Current-mA
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10
INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY Gmax
fT-Gain Bandwidth Product-MHz
3.0 2.0 1.0 0.5 0.3 0.2 VCE = 10 V 0.1 0 0.5 1.0 5.0 10 30
Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB
5.0
20 |S21e|2
10
0
VCE = 10 V IC = 20 mA 0.1 0.2 0.4 0.6 0.81.0 2 f-Frequency-GHz
IC-Collector Current-mA
2
2SC3356
NOISE FIGURE vs. COLLECTOR CURRENT 7 6
NF-Noise Figure-dB
VCE = 10 V f = 1.0 GHz
|S21e|2-Insertion Gain-dB
18
15
NF-Noise Figure-dB
5 4 3 2 1 0 0.5 1 5 10 50 70
NOISE FIGURE, FORWARD INSERTION GAIN vs. COLLECTOR TO EMITTER VOLTAGE 5 f = 1.0 GHz IC = 20 mA 4 |S21e|2 3 2 NF 1
12 6
3
0
0
2
4
6
8
10
IC-Collector Current-mA
VCE-Collector to Emitter Voltage-V
S-PARAMETER
VCE = 10 V, IC = 5 mA, ZO = 50
f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000
S11
0.651 0.467 0.391 0.360 0.360 0.361 0.381 0.398 0.423 0.445
S11 69.3 113.3 139.3 159.2 176.9
172.7 160.3 152.2 143.3 137.6
S21
10.616 6.856 4.852 3.802 3.098 2.646 2.298 2.071 1.836 1.689
S21
129.3 104.4 90.9 81.2 72.9 67.3 59.3 55.2 49.0 46.2
S12
0.051 0.071 0.086 0.101 0.118 0.137 0.157 0.180 0.203 0.220
S12
59.2 54.4 56.0 59.1 61.0 63.5 63.3 64.1 63.7 64.7
S22
0.735 0.550 0.468 0.426 0.397 0.373 0.360 0.337 0.320 0.302
S22 28.1 34.1 33.9 33.6 35.7 38.3 43.0 45.9 52.3 52.2
VCE = 10 V, IC = 5 mA, ZO = 50
f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000
S11
0.339 0.258 0.243 0.242 0.260 0.269 0.294 0.314 0.343 0.367
S11 107.0 147.3 167.7
177.0 164.5 157.6 148.7 143.1 136.5 131.4
S21
16.516 8.928 6.022 4.633 3.744 3.193 2.750 2.479 2.185 2.016
S21
108.7 92.1 83.0 76.2 69.9 65.7 58.8 55.5 50.1 47.8
S12
0.035 0.060 0.085 0.109 0.136 0.160 0.187 0.212 0.238 0.254
S12
66.1 71.0 71.9 72.2 70.4 69.9 66.7 65.2 62.4 61.6
S22
0.459 0.343 0.305 0.284 0.266 0.246 0.233 0.208 0.190 0.173
S22 36.6 32.9 29.9 29.4 31.7 35.0 40.4 43.6 50.5 48.3
3
2SC3356
S-PARAMETER
S11e, S22e-FREQUENCY CONDITION VCE = 10 V 200 MHz Step
0.
THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA OAD 0.4 0.02 ARD L REFLECTION COEFFCI 0.4 ENT IN 0.0TOR 3 HS TOWL F O 6 E 7 .0 DEG 0NGT ANG 4 0.4 REE 0 E 0.4 6 L 0 4 VE −1 S .0 6 0 .0 A 0 5 W 15 0.4 5 0.4 5 50 0 −1 .0 5 0 0. 0 44 POS . T 0.1 N 14 0.4 6 0 06 40 E ITIV ON 0 ER 4 MP 0. −1 EA CO C
5 0.
07 43 0. 0 13
1.6
12
0.7
8 0.0 2 0.4
0.9
1.0
0.8
1.2
9 0.0 1 0.4
.