RT3NFFM

Y RT3NFFM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3NFFM is a composite transistor built with RT1N431 chip and RT1N431 chip in SC-88 package. OUTLINE DRAWING 2.1 1.25 0.2 Unit mm FEATURE Each transistor elements are independent. Mini package for easy mounting 2.0 0.65 0.65 Silicon epitaxial type APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit 0.65 0.13 0 0.1 R1 R2 R2 R1 RTr2 TERMINAL CONNECTOR EMITTER1 BASE1 COLLECTOR2 EMITTER2 BASE2 :COLLECTOR1 JEITA SC-88 RTr1 MAXIMUM RATING (Ta=25 SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage ) RATING 50 10 50 100 200 150 150 -55 150 UNIT V V V mA mA mW 0.9 MARKING Collector to Emitter voltage Collector current Peak Collector current Collector dissipation Total, Ta=25 Junction temperature Storage temperature . ISAHAYA ELECTRONICS CORPORATION PRELIMINARY ELECTRICAL CHARACTERISTICS (Ta=25 Symbol V(BR)CEO ICBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT Parameter Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage Input off voltage Input resistor Resistor ratio Gain band width product IC=100 RT3NFFM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ) Test conditions A,RBE= Limits Min 50 20 0.8 3.3 0.8 Typ 0.1 1.4 1.1 4.7 1.0 200 Max 0.1 0.3 2.3 6.1 1.2 Unit V...