Document
RT1N431X SERIES
〈Transistor〉
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
DESCRIPTION
RT1N431X is a one chip transistor with built-in bias resistor,PNP type is RT1P431X. RT1N431U
1.6
OUTLINE
DRAWING
RT1N431C
2.5
UNIT:mm
FEATURE
・Built-in bias resistor (R1=4.7kΩ,R2=4.7kΩ). www.DataSheet4U.com
0.5
0.4
0.8
0.4
0.5
1.5
0.5
0.3
① ② ③
0.95
① ② ③
2.9 1.90
1.6 1.0
APPLICATION
Inverted circuit,switching circuit,interface circuit, driver circuit.
0.7 0.15 1.1 0.55 0.8 0.16
0~0.1
R1 B (IN) R2
C (OUT)
JEITA:- JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector
JEITA:SC-59 JEDEC:Similar to TO-236 Terminal Connector ①:Base ②:Emitter ③:Collector
E (GND)
RT1N431M RT1N431S
0.425 4.0 2.1 1.25 0.425
RT1N431T
0~0.1
Equivalent circuit
0.95
0.5
0.2
0.8
0.2
0.65
3.0
0.3
0.4
① ② ③
① ② ③
2.0 1.3
0.65
1.2 0.8
14.0
1.0
1.0
0.1 0.45
0.9
0.7
1.27 1.27 0.4
2.5
①
②
③
JEITA:- JEDEC:- Terminal Connector ①:Emitter ②:Collector ③:Base
JEITA:SC-70 JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector
0~0.1
0.15
0.45
0.4
JEITA:- JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector
ISAHAYA ELECTRONICS CORPORATION
0.25
0.4
RT1N431X SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL VCBO VEBO VCEO I C I CM PC www.DataSheet4U.com Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current
Collector dissipation(Ta=25℃)
〈Transistor〉
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
RT1N431T
RT1N431U
RATING RT1N431M 50 10 50 100 200 150
RT1N431C
RT1N431S
UNIT V V V mA mA mW ℃ ℃
125 (※ ) +125 -55~+125
125
450 +150 -55~+150 LIMIT TYP
Junction temperature Storage temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL V(BR)CEO I CBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistance Resistance ratio Gain band width product
(※ ) package mounted on 9mm×19mm×1mm glass-epoxy substrate.
TEST CONDITION I C=100μA,RBE=∞ VCB=50V,I E =0 VCE=5V,I C =10mA I C =10mA,I B =0.5mA VCE=0.2V,I C =5mA VCE=5V,I C =100μA
MIN 50 20
MAX 0.1
UNIT V μA - V V V kΩ MHz
0.8 3.3 0.8
VCE=6V,I
E
=-10mA
0.1 1.4 1.1 4.7 1.0 200
0.3 2.3 6.1 1.2
TYPICAL CHARACTERISTICS
IN P U T ON V OL TA G E V S. C OL L EC TOR C U R R EN T D C F OR W A R D C U R R EN T GA IN V S. C OL L EC TOR C U R R EN T
100
DC FORWARD CURRENT GAIN h FE
1000 VCE=0.2V VCE=5V
INPUT ON VOLTEGE V I(ON)(V)
10
100
1 1 10 COLLECTOR CURRENT I C(mA)
C OL L EC TOR C U R R EN T V S. IN P U T OF F V OL TA GE
10 100 1 10 COLLECTOR CURRENT I C (mA) 100
1000
COLLECTOR CURRENT I C(μA)
VCE=5V
100
10 0.0 0.4 0.8 1.2 1.6 2.0 INPUT OFF VOLTAGE VI(OFF)(V)
ISAHAYA ELECTRONICS CORPORATION
www.DataSheet4U.com
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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