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RT1N431T Dataheets PDF



Part Number RT1N431T
Manufacturers Isahaya Electronics Corporation
Logo Isahaya Electronics Corporation
Description Transistor
Datasheet RT1N431T DatasheetRT1N431T Datasheet (PDF)

RT1N431X SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N431X is a one chip transistor with built-in bias resistor,PNP type is RT1P431X. RT1N431U 1.6 OUTLINE DRAWING RT1N431C 2.5 UNIT:mm FEATURE ・Built-in bias resistor (R1=4.7kΩ,R2=4.7kΩ). www.DataSheet4U.com 0.5 0.4 0.8 0.4 0.5 1.5 0.5 0.3 ① ② ③ 0.95 ① ② ③ 2.9 1.90 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.1.

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RT1N431X SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N431X is a one chip transistor with built-in bias resistor,PNP type is RT1P431X. RT1N431U 1.6 OUTLINE DRAWING RT1N431C 2.5 UNIT:mm FEATURE ・Built-in bias resistor (R1=4.7kΩ,R2=4.7kΩ). www.DataSheet4U.com 0.5 0.4 0.8 0.4 0.5 1.5 0.5 0.3 ① ② ③ 0.95 ① ② ③ 2.9 1.90 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.15 1.1 0.55 0.8 0.16 0~0.1 R1 B (IN) R2 C (OUT) JEITA:- JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector JEITA:SC-59 JEDEC:Similar to TO-236 Terminal Connector ①:Base ②:Emitter ③:Collector E (GND) RT1N431M RT1N431S 0.425 4.0 2.1 1.25 0.425 RT1N431T 0~0.1 Equivalent circuit 0.95 0.5 0.2 0.8 0.2 0.65 3.0 0.3 0.4 ① ② ③ ① ② ③ 2.0 1.3 0.65 1.2 0.8 14.0 1.0 1.0 0.1 0.45 0.9 0.7 1.27 1.27 0.4 2.5 ① ② ③ JEITA:- JEDEC:- Terminal Connector ①:Emitter ②:Collector ③:Base JEITA:SC-70 JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector 0~0.1 0.15 0.45 0.4 JEITA:- JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector ISAHAYA ELECTRONICS CORPORATION 0.25 0.4 RT1N431X SERIES MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO I C I CM PC www.DataSheet4U.com Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type RT1N431T RT1N431U RATING RT1N431M 50 10 50 100 200 150 RT1N431C RT1N431S UNIT V V V mA mA mW ℃ ℃ 125 (※ ) +125 -55~+125 125 450 +150 -55~+150 LIMIT TYP Junction temperature Storage temperature ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL V(BR)CEO I CBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistance Resistance ratio Gain band width product (※ ) package mounted on 9mm×19mm×1mm glass-epoxy substrate. TEST CONDITION I C=100μA,RBE=∞ VCB=50V,I E =0 VCE=5V,I C =10mA I C =10mA,I B =0.5mA VCE=0.2V,I C =5mA VCE=5V,I C =100μA MIN 50 20 MAX 0.1 UNIT V μA - V V V kΩ MHz 0.8 3.3 0.8 VCE=6V,I E =-10mA 0.1 1.4 1.1 4.7 1.0 200 0.3 2.3 6.1 1.2 TYPICAL CHARACTERISTICS IN P U T ON V OL TA G E V S. C OL L EC TOR C U R R EN T D C F OR W A R D C U R R EN T GA IN V S. C OL L EC TOR C U R R EN T 100 DC FORWARD CURRENT GAIN h FE 1000 VCE=0.2V VCE=5V INPUT ON VOLTEGE V I(ON)(V) 10 100 1 1 10 COLLECTOR CURRENT I C(mA) C OL L EC TOR C U R R EN T V S. IN P U T OF F V OL TA GE 10 100 1 10 COLLECTOR CURRENT I C (mA) 100 1000 COLLECTOR CURRENT I C(μA) VCE=5V 100 10 0.0 0.4 0.8 1.2 1.6 2.0 INPUT OFF VOLTAGE VI(OFF)(V) ISAHAYA ELECTRONICS CORPORATION www.DataSheet4U.com Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for .


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