2SC3890
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maxim...
2SC3890
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage and High Speed Switchihg
Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3890 500 400 10 7(Pulse14) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching
Regulator and General Purpose External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 50typ
(Ta=25°C) 2SC3890 Unit
µA
V V V MHz pF
13.0min 16.9±0.3 8.4±0.2
µA
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL (Ω) 66 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –0.6 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max
2.54
3.9 B C E
I C – V CE Characteristics (Typical)
7
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (s a t) (V ) (I C /I B =5)
I C – V BE Temperature Characteristics (Typical)
7 (V C E =4V)
6
800
mA
A 600m
6 Collector Current I C (A) V B E (sat) 1
–55˚C (Cas e Temp)
mp)
)
as e 2 5 Tem p) ˚C
I B=
40 0m A
Collector Current I C (A)
300 mA
4
200 mA
Tem
p)
e Te 25˚C (Cas
125˚C (Case
4
) emp se T 25˚C (Ca
±0.2
0....