JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SC2130
TRANSISTOR (...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate
Transistors
TO – 92
2SC2130
TRANSISTOR (
NPN)
1. EMITTER
FEATURES z High DC Current Gain
2. COLLECTOR 3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 45 40 5 0.8 600 208 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE Cob fT Test conditions Min 45 40 5 0.1 0.1 0.1 100 320 0.5 0.8 13 100 V V pF MHz Typ Max Unit V V V μA μA μA
IC= 0.1mA,IE=0 IC=10mA,IB=0 IE=0.1mA,IC=0 VCB=35V,IE=0 VCE=25V,IB=0 VEB=5V,IC=0 VCE=1V, IC=100mA IC=500mA,IB=20mA VCE=1V, IC=10mA VCB=10V,IE=0, f=1MHz VCE=5V,IC=10mA
CLASSIFICATION OF hFE
RANK RANGE O 100-200 Y 160-320
B,Mar,2012
Typical Characteristics
150
2SC2130
hFE —— IC
VCE= 1V Ta=100 C
o
Static Characteristic
500uA COMMON EMITTER Ta=25℃ 400uA hFE DC CURRENT GAIN 300uA 250uA 200uA
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