MT48H16M32LF

512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile LPSDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 Banks MT48H16M32LF/LG – 4 Meg x 32 x 4 Banks Features VDD/VDDQ = 1.7–1.95V Fully synchronous; all signals registered on positive edge of system clock Internal, pipelined operation; column address can be changed every clock cycle Four internal banks for concurrent operation Programmable burst lengths: 1, 2, 4, 8, and continuous Auto precharge, includes concurrent auto precharge Auto refresh and self refresh modes LVTTL-compatible inputs and outputs On-chip temperature sensor to control self refresh rate Partial-array self refresh (PASR) Deep power-down (DPD) Selectable output drive strength (DS) 64ms refresh period; 32ms for automotive temperature Options VDD/VDDQ: 1.8V/1.8V Addressing – Standard addressing option – Reduced page size option1 Configuration – 32 Meg x 16 (8 Meg x 16 x 4 banks) – 16 Meg x 32 (4 Meg x 32 x 4 banks) Plastic “green” packages – 54-ball VFBGA (8mm x 8mm) 2 – 90-ball VFBGA (8mm x 13mm) 3 Timing – cycle time – 6ns at CL = 3 – 7.5ns at CL = 3 Power – Standard IDD2/IDD7 – Low-power IDD2/IDD71 Operating temperature range – Commercial (0˚C to +70˚C) – Industrial (–40˚C to +85˚C) – Automotive (–40˚C to +105˚C) Revision Notes: Marking H LF LG 32M16 16M32 B4 B5 -6 -75 None L None IT AT :C 1. Contact factory for availability. 2. Available only for x16 configuration. 3. Available only for x32 configuration. Table 1...