Document
HI-SINCERITY
MICROELECTRONICS CORP.
HBC856
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6832 Issued Date : 1994.02.03 Revised Date : 2004.09.01 Page No. : 1/4
Description
The HBC856 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures Storage Temperature.......................................................................................................................... -55 to +150 °C Junction Temperature.................................................................................................................................... +150 °C
• Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW
• Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ....................................................