RB160MM-50

Schottky Barrier Diode RB160MM-50 lApplication General rectification lDimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 Data Sheet lLand Size Figure (Unit : mm) 1.2 0.85 lFeatures 1) Small power mold type (PMDU) 2) High reliability 3) Low VF 0.9±0.1 0.12 3.5±0.2 2.6±0.1 PMDU lStructure 0.8±0.1 Cathode ROHM : PMDU JEDEC : SOD-123FL : Manufacture Date lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 f1.55 0.05 1.75±0.1 Anode 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0 1.0±0.1 f 0.1 3.71±0.1 1.5MAX lAbsolute Maximum Ratings (Tc= 25°C) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Rectified Current Non-repetitive Forward Current Surge Peak Symbol VRM VR Io IFSM Tj Tstg Conditions Duty≦0.5 Direct Reverse Voltage Glass epoxi mounted, 60Hz half sin Wave resistive load 60Hz half sin wave ,Non-repetitive at Ta=25°C Limits 50 40 1 30 150 -40 to +150 3.05 Unit V V A A °C °C Operating Junction Temperature Storage Temperature - lElectrical Characteristics (Tj = 25°C) Parameter Forward Voltage Reverse Current Symbol VF IR Conditions IF=1.0A VR=40V Min. Typ. Max. Unit 0.46 0.51 4.0 30 V mA www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/5 2014.09 - Rev.A RB160MM-50 lElectrical Characteristic Curves Data Sheet 1 Tj = 150°C 100000 Tj = 150°C Tj = 125°C 0.1 Tj = 75°C Tj = 25°C 0.01 Tj = -25°C 0.001 0 100 200 300 400 500 600 REVERSE CURRENT : IR(mA) FORWARD CU...