RFV8TG6S

Super Fast Recovery Diode RFV8TG6S lSerise Standard Fast Recovery 2.7±0.1 Data Sheet lDimensions (Unit : mm) f3.8±0.06 10.2±0.2 1.28±0.06 6.0±0.15 4.5±0.1 lStructure lApplication General rectification For PFC (CCM : Continuous Current Mode) lFeatures 1) Hyper fast recovery / Hard recovery type 3) High current overload capacity lConstruction Silicon epitaxial planar type 16.4±0.15 4.05±0.15 28.56 1 2 9.05 RFV8 TG6S 15.05±0.15 Cathode Anode 2.6±0.1 1.4±0.2 13.51 2 0.6±0.1 2.54±0.1 0.83±0.06 0.10 5.08±0.1 ROHM : TO-220AC 1 : Manufacture year, week,day, package code : Serial number lAbsolute Maximum Ratings (Ta= 25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average current Non-repetitive forward surge current Symbol VRM VR Io IFSM Tj Tstg 9.46 2) Ultra low switching loss Conditions Duty≦0.5 Direct reverse voltage 60Hz half sin wave , resistive load 60Hz half sin wave, one cycle, non-repetitive at T j=25°C Limits 600 600 8 100 150 -55 to +150 Unit V V A A °C °C Operating junction temperature Storage temperature - lElectrical Characteristics (Tj = 25°C) Parameter Forward voltage Reverse current Reverse recovery time Reverse recovery current Reverse recovery charges Forward recovery time Forward recovery voltage Thermal resistance Symbol VF IR trr IRp Qrr tfr VFp Rth(j-a) Rth(j-c) Conditions IF=8A VR=600V Tj=25°C Tj=125°C Tj=25°C Tj=125°C Min. 1.6 - Typ. Max. Unit 2.3 1.55 0.03 5 15 25 5.5 150 125 4.5 2.8 10 200 25 45 2.5 1.5 V V mA mA ns...