N-Channel Enhancement Mode MOSFET
HY3506P/W
N-Channel Enhancement Mode MOSFET
Features
• • • •
60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V
Pin Descriptio...
Description
HY3506P/W
N-Channel Enhancement Mode MOSFET
Features
60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V
Pin Description
100% avalanche tested
Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
G
D
G
S
D
S
TO-220
D
TO-247
Applications
Switching application
Power Management for Inverter Systems.
S G
N-Channel MOSFET
Ordering and Marking Information
Package Code
ÿ YYXXXJWW G
P HY3506
ÿ YYXXXJWW G
W HY3506
P : TO220-3L Date Code YYXXX WW Assembly Material G : Lead Free Device
W : TO247-3L
Note:
HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
1
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HY3506P/W
Absolute Maximum Ratings
Symbol VDSS VGSS TJ TSTG IS IDM ID PD RθJC RθJA EAS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Curren...
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