R1WV6416RBG-5S

R1WV6416R Series 64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit) REJ03C0368-0100 Rev.1.00 2009.05.07 Description The R1WV6416R Series is a family of low voltage 64-Mbit static RAMs organized as 4,194,304-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1WV6416R Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. The R1WV6416R Series is provided in 48-pin thin small outline package [TSOP (I): 12mm x 20mm with pin pitch of 0.5mm], 52-pin micro thin small outline package [µTSOP (II): 10.79mm x 10.49mm with pin pitch of 0.4mm] and 48-ball fine pitch ball grid array [f-BGA] package. It gives the best solution for compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards. Features Single 2.7~3.6V power supply Small stand-by current: 8 µA (3.0V, typical) No clocks, No refresh All inputs and outputs are TTL compatible. Easy memory expansion by CS1#, CS2, LB# and UB# Common Data I/O Three-state outputs: OR-tie Capability OE# prevents data contention on the I/O bus Ordering Information Type No. R1WV6416RSA-5S% R1WV6416RSA-7S% R1WV6416RSD-5S% R1WV6416RSD-7S% R1WV6416RBG-5S% R1WV6416RBG-7S% Access time 55 ns 70 ns 55 ns 70 ns 55 ns 70 ns Package 12mm x 20mm 48-pin plastic TSOP (I) (normal-bend type) (48P3R) 350 mil 52-pin plastic μ-TSOP (II) (normal-bend type) (52PTG) f-BGA 0.75mm pitch ...