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AS6C1616

Alliance Semiconductor

1024K X 16 BIT LOW POWER CMOS SRAM

APRIL 2010 AS6C1616 1024K X 16 BIT LOW POWER CMOS SRAM FEATURES Fast access time : 55ns Low power consumption: Operati...


Alliance Semiconductor

AS6C1616

File Download Download AS6C1616 Datasheet


Description
APRIL 2010 AS6C1616 1024K X 16 BIT LOW POWER CMOS SRAM FEATURES Fast access time : 55ns Low power consumption: Operating current : 45/30mA (TYP.) Standby current : 10µA (TYP.) LL-version 4µA (TYP.) SL-version Single 2.7V ~ 3.6V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 1.2V (MIN.) Green package available Package : 48-pin 12mm x 20mm TSOP-I GENERAL DESCRIPTION The AS6C1616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C1616 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The AS6C1616 operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family AS6C1616(I) Operating Temperature -40 ~ 85℃ Vcc Range 2.7 ~ 3.6V Speed 55ns Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) 10µA (LL)/4µA(SL) 45/30mA FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION Address Inputs Chip Enable Input Write Enable Input Output Enable Input Lower Byte Control Upper Byte Control Power Supply Ground A0 - A19 CE#, CE2 WE# OE# LB# UB# VCC Vcc Vss DQ0 – DQ15 Data Inputs/Outputs DECODER 1024Kx16 MEMORY...




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