AS6C8016A

AS6C8016A Low Power, 512Kx16 SRAM Revision History 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision No 1.0 2.0 3.0 History Initial Issue tDW updated to 25ns Update USA HQ moved - change of address Date August 2010 October 2012 September 2014 Remark Preliminary Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice. 1 Rev. 3.0 Sep /2014 AS6C8016A Low Power, 512Kx16 SRAM FEATURES Process Technology : 0.15m Full CMOS Organization : 512K x 16 bit Power Supply Voltage : 2.7V ~ 3.6V Low Data Retention Voltage : 1.5V(Min.) Three state output and TTL Compatible Package Type : 48-FPBGA dual CS – A6 is CS2 All parts are ROHS Compliant GENERAL DESCRIPTION The AS6C8016A families are fabricated by advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back- up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Industrial (-40 ~ 85oC) Vcc Range Speed Standby (ISB1, Typ.) 2 A1) Operating (ICC1.Max.) 4 mA PKG Type AS6C8016A-55BIN 2.7 ~ 3.6 V 55 ns 48-FPBGA FUNCTIONAL BLOCK DIAGRAM Pre-charge Circuit A10 DQ0 ~ DQ7 DQ8 ~ DQ15 Data Cont A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 VCC Row Select ...