AS6C8016

NOVEMBER 2007 January 2007 AS6C8016 X 8 BITCMOS LOW SRAM POWER CMOS SRAM 512K X 16 BIT SUPER 512K LOW POWER FEATURES Fast access time : 55ns Low power consumption: Operating current : 30mA (TYP.) Standby current : 6µA (TYP.) LL-version Single 2.7V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 1.5V (MIN.) Lead free and green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA GENERAL DESCRIPTION The AS6C8016 is a 8,388,608-bit low power CMOS static random access memory organized as 524,288 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C8016 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The AS6C8016 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family AS6C8016(I) Operating Temperature -40 ~ 85℃ Vcc Range 2.7 ~ 5.5V Speed 55ns Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) 6µA(LL) 30mA FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION Address Inputs Chip Enable Input Write Enable Input Output Enable Input Lower Byte Control Upper Byte Control Power Supply Ground A0 - A18 CE# WE# OE# LB# UB# VCC Vcc Vss DQ0 – DQ15 Da...