AS6C2016

FEBRUARY 2008 January 2007 AS6C2016 512K X 8CMOS BIT LOW 128K X 16 BIT LOW POWER SRAMPOWER CMOS SRAM FEATURES Fast access time : 55ns Low power consumption: Operating current : 20/18mA (TYP.) Standby current : 2µA (TYP.) Single 2.7V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 2.0V (MIN.) Lead free and green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA GENERAL DESCRIPTION The AS6C2016 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C2016 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The AS6C2016 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family AS6C2016 (I) Operating Temperature -40 ~ 85℃ Vcc Range 2.7 ~ 5.5V Speed 55ns Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) 2µA 20/18mA FEBRUARY/2008, V 1.c Alliance Memory Inc. Page 1 of 13 FEBRUARY 2008 January 2007 AS6C2016 512K X 8CMOS BIT LOW 128K X 16 BIT LOW POWER SRAMPOWER CMOS SRAM FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL Vcc Vss DESCRIPTION Address Inputs Chip Enable Input...