BF975NF75B

BF975NF75B BYD Microelectronics Co., Ltd. 75V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Features z z z z z z VDS =75 V ID =80A Typical RDS(ON)=7.5m Ω (VGS=10V,ID=40A) Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings Symbol VDS ID IDM VGS EAS IAR EAR dv/dt PD TJ,Tstg TL Parameter Drain-Source Voltage Drain Current(continuous)at Tc=25℃ Drain Current (pulsed) Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) Operating junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose （Note2） （Note1） （Note1） （Note3） （Note1） Value 75 80 320 ±20 800 35 18 11 210 -55 to +175 300 Unit V A A V mJ A mJ V/ns W ℃ ℃ Datasheet TS-MOS-PD-0037 Rev.A/2 Page 1 of 6 BYD Microelectronics Co., Ltd. BF975NF75B Package TO-220 Packaging Tube Ordering Information Part Number BF975NF75B Thermal Data Symbol Rthj-Case Rthj-Amb Parameter Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max. 0.6 63.0 Unit ℃/W ℃/W Electrical Characteristics(Tc = 25℃) Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Ciss Co...