R1RW0408D

R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) Datasheet R10DS0286EJ0100 Rev.1.00 Nov.18.19 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408D is packaged in 400-mil 36-pin SOJ for high density surface mounting. Features Single 3.3V supply: 3.3V ± 0.3V Access time: 12ns (max) Completely static memory ⎯ No clock or timing strobe required Equal access and cycle times Directly TTL compatible ⎯ All inputs and outputs Operating current: 100mA (max) TTL standby current: 40mA (max) CMOS standby current : 5mA (max) : 0.8mA (max) (L-version) Data retention current : 0.4mA (max) (L-version) Data retention voltage: 2.0V (min) (L-version) Center VCC and VSS type pin out Ordering Information Type No. R1RW0408DGE-2PR R1RW0408DGE-2LR Access time 12ns 12ns Version Normal L-Version Package 400-mil 36-pin plastic SOJ R10DS0286EJ0100 Rev.1.00 Nov.18.19 Page 1 of 11 R1RW0408D Series Pin Arrangement Pin Description A0 to A18 I/O1 to I/O8 CS# OE# WE# VCC VSS NC Pin name Address input Data input/output Chip select Output enable Write enable Power supply Ground No connection Function R10DS0286EJ0100 Rev.1...