HB54R1G9F2

DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2-A75B/B75B/10B (128M words × 72 bits, 2 Banks) Description The HB54R1G9F2 is a 128M × 72 × 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of 256Mbits DDR SDRAM (HM5425401BTB) sealed in TCP package, 1 piece of PLL clock driver, 2 pieces of register driver and 1 piece of serial EEPROM (2k bits EEPROM) for Presence Detect (PD). Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 2-bit prefetch-pipelined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. An outline of the products is 184-pin socket type package (dual lead out). Therefore, it makes high density mounting possible without surface mount technology. It provides common data inputs and outputs. Decoupling capacitors are mounted beside each TCP on the module board. Note: Do not push the cover or drop the modules in order to protect from mechanical defects, which would be electrical defects. Features 184-pin socket type package (dual lead out)  Outline: 133.35mm (Length) × 43.18mm (Height) × 4.80mm (Thickness)  Lead pitch: 1.27mm 2.5V power supply (VCC/VCCQ) SSTL-2 interface for all inputs and outputs Clock frequency: 143MHz/133MHz/125MHz (max.) Data inputs and outputs are synchronized with DQS 4 bank...