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MT29F128G08CFAAA Dataheets PDF



Part Number MT29F128G08CFAAA
Manufacturers Micron
Logo Micron
Description NAND Flash Memory
Datasheet MT29F128G08CFAAA DatasheetMT29F128G08CFAAA Datasheet (PDF)

Micron Confidential and Proprietary 64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F64G08CBAA[A/B], MT29F128G08C[E/F]AAA, MT29F128G08CFAAB, MT29F256G08C[J/K/M]AAA, MT29F256G08CJAAB, MT29F512G08CUAAA, MT29F64G08CBCAB, MT29F128G08CECAB, MT29F256G08C[K/M]CAB, MT29F512G08CUCAB Features • Open NAND Flash Interface (ONFI) 2.2-compliant1 • Multiple-level cell (MLC) technology • Organization – Page size x8: 8640 bytes (8192 + 448 bytes) – Block size: 256 pages (.

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Micron Confidential and Proprietary 64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F64G08CBAA[A/B], MT29F128G08C[E/F]AAA, MT29F128G08CFAAB, MT29F256G08C[J/K/M]AAA, MT29F256G08CJAAB, MT29F512G08CUAAA, MT29F64G08CBCAB, MT29F128G08CECAB, MT29F256G08C[K/M]CAB, MT29F512G08CUCAB Features • Open NAND Flash Interface (ONFI) 2.2-compliant1 • Multiple-level cell (MLC) technology • Organization – Page size x8: 8640 bytes (8192 + 448 bytes) – Block size: 256 pages (2048K + 112K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 64Gb: 4096 blocks; 128Gb: 8192 blocks; 256Gb: 16,384 blocks; 512Gb: 32,786 blocks • Synchronous I/O performance – Up to synchronous timing mode 52 – Clock rate: 10ns (DDR) – Read/write throughput per pin: 200 MT/s • Asynchronous I/O performance – Up to asynchronous timing mode 5 – tRC/tWC: 20ns (MIN) – Up to asynchronous timing mode 5 – Read/write throughput per pin: 50 MT/s • Array performance – Read page: 75µs (MAX) – Program page: 1300µs (TYP) – Erase block: 3.8ms (TYP) • Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7–1.95V, 2.7–3.6V • Command set: ONFI NAND Flash Protocol • Advanced Command Set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Multi-plane commands – Multi-LUN operations – Read unique ID – Copyback • First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 109). • RESET (FFh) required as first command after poweron • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status • Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface • Copyback operations supported within the plane from which data is read • Quality and reliability – Data retention: JESD47G compliant; see qualification report – Endurance: 3000 PROGRAM/ERASE cycles • Operating temperature: – Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC • Package – 52-pad LGA – 48-pin TSOP – 100-ball BGA Notes: 1. The ONFI 2.2 specification is available at www.onfi.org. 2. BGA devices up to Synchronous timing mode 5. TSOP devices up to Synchronous timing mode 4. PDF: 09005aef83d2277a Rev. E 3/11 EN 1 Products and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. Micron Confidential and Proprietary 64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Numbering MT 29F 64G 08 Micron Technology NAND Flash 29F = NAND Flash memory C B A A A WP ES :A Design Revision A = First revision Production Status Blank = Production ES = Engineering sample Density 64G = 64Gb 128G = 128Gb 256G = 256Gb 512G = 512Gb Reserved for Future Use Blank Operating Temperature Range Blank = Commercial (0°C to +70°C) IT = Industrial (–40°C to +85°C) Device Width 08 = 8 bits Level Bit/Cell C 2-bit Speed Grade (synchronous mode only) -12 = 166 MT/s -10 = 200 MT/s Classification Die # of CE# # of R/B# I/O B E F J K M U 1 2 2 4 4 4 8 1 2 2 2 2 4 4 1 2 2 2 2 4 4 Common Separate Common Common Separate Separate Separate Package Code C5 = 52-pad VLGA 14mm x 18mm x 1.0mm1 H1 = 100-ball VBGA 12mm x 18mm x 1.0mm1 H2 = 100-ball TBGA 12mm x 18mm x 1.2mm1 H3 = 100-ball LBGA 12mm x 18mm x 1.4mm1 WP = 48-pin TSOP1 (CPL) Interface A = Async only B = Sync/Async Operating Voltage Range Generation Feature Set A = VCC: 3.3V (2.7–3.6V), VCCQ: 3.3V (2.7–3.6V) C = VCC: 3.3V (2.7–3.6V), VCCQ: 1.8V (1.7–1.95V) A = First set of device features Note: 1. Pb-free package. PDF: 09005aef83d2277a Rev. E 3/11 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. Micron Confidential and Proprietary 64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND Features Contents General Description ......................................................................................................................................... 9 Asynchronous and Synchronous Signal Descriptions ......................................................................................... 9 Signal Assignments ......................................................................................................................................... 11 Package Dimensions ...................................................................................................


MT29F128G08CECAB MT29F128G08CFAAA MT29F128G08CFAAB


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