FLASH MEMORY
MX29GL128E
MX29GL128E DATASHEET
P/N:PM1500
REV. 1.8, NOV. 13, 2013 1
MX29GL128E
SINGLE VOLTAGE 3V ONLY FLASH MEMORY ...
Description
MX29GL128E
MX29GL128E DATASHEET
P/N:PM1500
REV. 1.8, NOV. 13, 2013 1
MX29GL128E
SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES
GENERAL FEATURES Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL128E H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC - MX29GL128E U/D: VI/O=1.65V~3.6V for Input/Output Byte/Word mode switchable - 16,777,216 x 8 / 8,388,608 x 16 64KW/128KB uniform sector architecture - 128 equal sectors 16-byte/8-word page read buffer 64-byte/32-word write buffer Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable Advanced sector protection function (Solid and Password Protect) Latch-up protected to 100mA from -1V to 1.5xVcc Low Vcc write inhibit : Vcc ≤ VLKO Compatible with JEDEC standard - Pinout and software compatible to single power supply Flash Deep power down mode
PERFORMANCE High Performance - Fast access time: - MX29GL128E H/L: 90ns (VCC=2.7~3.6V)
- MX29GL128E U/D: 110ns (VCC=2.7~3.6V, V I/O=1.65V to Vcc)
- Page access time: - MX29GL128E H/L: 25ns
- MX29GL128E U/D: 30ns
- Fast program time: 10us/word - Fast erase time: 0.5s/sector Low Power Consumption - Low active read current: 10mA (typical) at 5MHz - Low standby current: 20uA (typical) Typical 100,000 erase/program cycle 20 years data retention
SOFTWARE FEATURES Program/Erase Suspend & Program/Erase Resume - Suspends se...
Similar Datasheet