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MX29F1615 Dataheets PDF



Part Number MX29F1615
Manufacturers Macronix International
Logo Macronix International
Description 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
Datasheet MX29F1615 DatasheetMX29F1615 Datasheet (PDF)

PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles Fast access time: 90/100/120ns Auto Erase and Auto Program Algorithms - Automatically erases the whole chip - Automatically programs and verifies data at specified addresses Status Register feature for detection of program or erase cycle completion Low VCC write inhibit is equal to or less than 3.2V • Software and hardware.

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PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles Fast access time: 90/100/120ns Auto Erase and Auto Program Algorithms - Automatically erases the whole chip - Automatically programs and verifies data at specified addresses Status Register feature for detection of program or erase cycle completion Low VCC write inhibit is equal to or less than 3.2V • Software and hardware data protection • Page program operation - Internal address and data latches for 64 words per page - Page programming time: 0.9ms typical Low power dissipation - 30mA typical active current - 1uA typical standby current CMOS and TTL compatible inputs and outputs Package Type: - 42 lead PDIP • • • • • GENERAL DESCRIPTION The MX29F1615 is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. MXIC's Flash memories offer the most cost-effective and reliable read/ write non-volatile random access memory. The MX29F1615 is packaged in 42-pin PDIP. It is designed to be reprogrammed and in standard EPROM programmers. The standard MX29F1615 offers access times as fast as 90ns,allowing operation of high-speed microprocessors without wait. To eliminate bus contention, the MX29F1615 has separate chip enables(CE) and output enable (OE) control. MXIC's Flash memories augment EPROM functionality with electrical erasure and programming. The MX29F1615 uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. To allow for simple in-system reprogrammability, the MX29F1615 requires high input voltages (10V) on BYTE/ VPP pin for programming. Reading data out of the device is similar to reading from an EPROM. MXIC Flash technology reliably stores memory contents even after 100 cycles. The MXIC's cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F1615 uses a 5V ± 10% VCC supply to perform the Auto Erase and Auto Program algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC +1V. P/N: PM0615 1 REV.1.1, JUN. 15, 2001 MX29F1615 PIN CONFIGURATIONS 42 PDIP(600mil) A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE GND OE Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE/VPP GND Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC PIN DESCRIPTION SYMBOL A0 - A19 Q0 - Q14 Q15/A - 1 CE OE BYTE/VPP VCC GND PIN NAME Address Input Data Input/Output Q15(Word mode)/LS.


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