P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9565GEH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ ...
Description
AP9565GEH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
D G S
BVDSS RDS(ON) ID
-40V 38mΩ -24A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9565GEJ) is available for low-profile applications.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating -40 +16 -24 -15 -80 35.7 0.28 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 3.5 62.5 110
Units ℃/W ℃/W ℃/W 1 200903094
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
AP9565GEH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
...
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