AP9565GEM

AP9565GEM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant SO-8 S S D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S G -40V 38mΩ -6.5A D Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -40 ±16 -6.5 -5.2 -30 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit ℃/W Data and specifications subject to change without notice 200503061-1/4 AP9565GEM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -40 -0.8 - Typ. -0.02 6 12.8 2.1 6.3 8.9 6 26.9 36.9 980 160 110 6 Max. Units 38 48 -2.5 -1 -25 ±30 20 1570 9 V V/℃ mΩ mΩ V S uA uA u...