AP02N60T-H-HF

AP02N60T-H-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 700V 9Ω 0.3A S S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is widely used for commercial-industrial applications. D G TO-92 Top View Absolute Maximum Ratings Symbol VDS VGS ID@TL=25℃ IDM PD@TL=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 700 +30 0.3 1.2 2 3 Units V V A A W mJ ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 25 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-a Rthj-l Parameter Maximum Thermal Resistance, Junction-ambient Maximum Thermal Resistance, Junction-lead Value 150 60 Units ℃/W ℃/W 1 200911041 Data & specifications subject to change without notice AP02N60T-H-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charg...