AP01L60T-HF

AP01L60T-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free S G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12Ω 160mA Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is widely used for all commercial-industrial applications. G D S TO-92 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 +30 160 100 300 0.83 -55 to 150 -55 to 150 Units V V mA mA mA W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 150 Unit ℃/W Data & specifications subject to change without notice 1 200906085 AP01L60T-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=1mA VGS=10V, ID=0.5A VDS=VGS, ID=250uA VDS=10V, ID=0.5A VDS=600V, VGS=0V VGS=+30V, VDS=0V ID=100mA VDS=480V VGS=10V VDD=...