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AP3987P-HF Dataheets PDF



Part Number AP3987P-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP3987P-HF DatasheetAP3987P-HF Datasheet (PDF)

AP3987P-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 1Ω 7A S Description AP3987 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-220 type provide G high blocking voltage to overcome voltage surge and sag in the toughest D S po.

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AP3987P-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 1Ω 7A S Description AP3987 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-220 type provide G high blocking voltage to overcome voltage surge and sag in the toughest D S power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits. TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 +30 7 4.4 28 104 2 Units V V A A A W mJ ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 27 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.2 62 Unit ℃/W ℃/W 1 201307081 Data & specifications subject to change without notice AP3987P-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 3 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=480V, VGS=0V VGS=+30V, VDS=0V ID=7A VDS=480V VGS=10V VDD=300V ID=7A RG=10Ω VGS=10V VGS=0V VDS=25V f=1.0MHz Min. 600 2 Typ. 5 55 9 16 15 15 100 32 160 6 Max. Units 1 4 100 +100 90 V Ω V S uA nA nC nC nC ns ns ns ns pF pF pF 2750 4400 Source-Drain Diode Symbol VSD trr Qrr Notes: 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=1.0mH , RG=25Ω Parameter Forward On Voltage 3 Test Conditions IS=7A, VGS=0V IS=7A, VGS=0V, dI/dt=100A/µs Min. - Typ. 530 8.6 Max. Units 1.5 V ns uC Reverse Recovery Time Reverse Recovery Charge 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 .


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