N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP05FN50I
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Fast trr Performance ▼ Fast Switching Characteristi...
Description
AP05FN50I
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Fast trr Performance ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
500V 1.8Ω 4.4A
S
Description
AP05FN50 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. It provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching design and cost-effectiveness. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
G D S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 500 +20 4.4 2.7 18 31.3 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 65 Unit ℃/W ℃/W 1 201211273
Data & specifications subject to change without notice
AP05FN50I
Electrical Characteristics@Tj=25 C(unless otherwise spec...
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